[原分所演講] Reminder: IAMS Lecture on Feb 16, 10:00am, Dr. Poe Lecture Hall, Dr. MingYang Li
消息來源：中研院原分所
截止日期：2016-02-15
IAMS Lecture Announcement
中研院原分所演講公告
Title: Two-dimensional transition metal dichalcogenides heterostructures and their device applications
Speaker: Dr. MingYang Li (Research Center for Applied Sciences, Academia Sinica)
Time: 10:00 AM, February 16 (Tuesday)
Place: Dr. Poe Lecture Hall, IAMS (本所浦大邦講堂 臺大校園內)
Contact: Dr. Jung-Chi Liao 廖仲麒博士
Abstract:
Two-dimensional (2D) layered materials have attracted a lot of interest in fundamental researches and device applications by their unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The interlayer interaction based on van der Waals force enables the possibility to assemble different 2D materials into arbitrarily stacked heterostructures. With the effort on exploring various 2D materials, a full range of materials types, including large band gap insulators, semiconductors, and semimetals has been developed, providing 2D materials as an excellent building block for band engineering. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions, which provides cleaner interface and have great potential for wafer scale application. Herein, I will introduce the developed approaches for synthesizing high-quality and large scale 2D transition metal dichalcogenides and heterojunctions by chemical vapor deposition (CVD). The structural, optical and electrical investigations confirm the formation of sharp interface at the heterojunctions. Furthermore, these heterojunctions exhibit good and controllable optoelectronic properties and transport properties, which offer a more flexible strategy for device designing and operating. The sharp interface formed at both vertical and lateral heterojunction by CVD and transfer processes provide interesting platform for the study of fundamental material science and for the realization of future 2D electronics or valleytronics.
中研院原分所演講公告
Title: Two-dimensional transition metal dichalcogenides heterostructures and their device applications
Speaker: Dr. MingYang Li (Research Center for Applied Sciences, Academia Sinica)
Time: 10:00 AM, February 16 (Tuesday)
Place: Dr. Poe Lecture Hall, IAMS (本所浦大邦講堂 臺大校園內)
Contact: Dr. Jung-Chi Liao 廖仲麒博士
Abstract:
Two-dimensional (2D) layered materials have attracted a lot of interest in fundamental researches and device applications by their unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The interlayer interaction based on van der Waals force enables the possibility to assemble different 2D materials into arbitrarily stacked heterostructures. With the effort on exploring various 2D materials, a full range of materials types, including large band gap insulators, semiconductors, and semimetals has been developed, providing 2D materials as an excellent building block for band engineering. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions, which provides cleaner interface and have great potential for wafer scale application. Herein, I will introduce the developed approaches for synthesizing high-quality and large scale 2D transition metal dichalcogenides and heterojunctions by chemical vapor deposition (CVD). The structural, optical and electrical investigations confirm the formation of sharp interface at the heterojunctions. Furthermore, these heterojunctions exhibit good and controllable optoelectronic properties and transport properties, which offer a more flexible strategy for device designing and operating. The sharp interface formed at both vertical and lateral heterojunction by CVD and transfer processes provide interesting platform for the study of fundamental material science and for the realization of future 2D electronics or valleytronics.