Lecture Anncouncement on August 23, 10:00 am, Dr. Poe Lecture Hall
截止日期：2011-08-19
IAMS Lecture Announcement
中研院原分所演講公告
Title: Remaining Issues in Graphene Electronics: Scale-Up Production and Band Gap Opening
Speaker: Dr. Lain-Jong Li 李連忠博士
(Research Center for Applied Science, Academia Sinica)
Time: 10:00-11:00 AM, August 23 (Tuesday)
Place: Dr. Poe Lecture Hall, IAMS (本所浦大邦講堂)
Contact: Dr. Jer-Lai Kuo 郭哲來博士
Abstract:
Single- and few-layer graphene films are promising for post-silicon electronics because of their high carrier mobility, high optical transmittance, strong mechanical properties and excellent stability. However, several fundamental and technological issues, such as lack of energy band gap and scale-up production method, still hinder their applications in electronics. In this seminar, discussions will be focused on our recent approaches to attack these issues, including
1. Electrochemical exfoliation of graphite to efficiently obtain large quantity and high quality graphene thin sheets.
2. Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition.
3. Symmetry breaking of graphene monolayers by molecular decoration.
4. Opening electrical band gap of bilayer graphene with molecular doping.
To stimulate possible collaborative research efforts, ongoing research and future perspectives will also be discussed.
中研院原分所演講公告
Title: Remaining Issues in Graphene Electronics: Scale-Up Production and Band Gap Opening
Speaker: Dr. Lain-Jong Li 李連忠博士
(Research Center for Applied Science, Academia Sinica)
Time: 10:00-11:00 AM, August 23 (Tuesday)
Place: Dr. Poe Lecture Hall, IAMS (本所浦大邦講堂)
Contact: Dr. Jer-Lai Kuo 郭哲來博士
Abstract:
Single- and few-layer graphene films are promising for post-silicon electronics because of their high carrier mobility, high optical transmittance, strong mechanical properties and excellent stability. However, several fundamental and technological issues, such as lack of energy band gap and scale-up production method, still hinder their applications in electronics. In this seminar, discussions will be focused on our recent approaches to attack these issues, including
1. Electrochemical exfoliation of graphite to efficiently obtain large quantity and high quality graphene thin sheets.
2. Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition.
3. Symmetry breaking of graphene monolayers by molecular decoration.
4. Opening electrical band gap of bilayer graphene with molecular doping.
To stimulate possible collaborative research efforts, ongoing research and future perspectives will also be discussed.